Kiasu Pulse 健身房人数Gym occupancy科研突围 · Lab Breakout
Xuanqi Chen谌宣锜

NUS / Electrical & Computer Engineering

Xuanqi
Chen谌宣锜

博士候选人
氧化物半导体器件与可靠性Ph.D. candidate
Oxide semiconductor devices & reliability

Google Scholar代表成果Selected work

让芯片向上生长，先让器件可靠。Build upward. Start with reliable devices.

52 秒 · 研究导览52 sec · Research story

01 / 05 · 从哪里开始

先看已经做好的硅电路。

蓝色是底层硅器件，金属线把器件连成电路。现在的问题是：能不能利用它上方的空间？

底层硅器件
金属互连
已有电路 · 剖面示意
概念示意 / 非实验结果Concept / Not experimental data
从平面电路，走向垂直集成。

从硅电路到上层氧化物器件，放大介绍材料与界面研究，再回到三维集成。结构、曲线与高亮仅用于解释概念，非实际比例或工艺流程；不同研究方向不代表一套已完成的集成工艺。From silicon circuits to upper-tier oxide devices, then into materials and interfaces, and back to 3D integration. Geometry, curves and highlights are conceptual, not to scale or a process flow. Research directions are not a demonstrated integrated process. imec: M3D ↗

代表论文Selected publications

完整列表见 Google ScholarFull list on Google Scholar ↗
其他代表成果 · 2024–2025Earlier selected work · 2024–2025

以上三项以研究主题介绍，链接指向正式论文。* 表示共同贡献。These three entries are research-theme summaries linked to the published papers. * Equal contribution.

我研究氧化物晶体管，
尤其关心它们为什么会变得不稳定，
以及怎样让它们更可靠。I study oxide transistors—
why they become unstable,
and how to make them more reliable.

在 NUS，我从器件制备与电学测试出发，研究缺陷、氢与栅侧界面对稳定性的影响。目前的工作主要围绕氟钝化、界面工程，以及后道兼容器件的阈值调控。At NUS, I combine device fabrication and electrical measurements to study how defects, hydrogen, and gate-side interfaces affect stability. My work focuses on fluorine passivation, interface engineering, and threshold control in BEOL-compatible devices.

Oxide semiconductorsDevice reliabilityBEOL integration

我在做什么What I work on

从材料与界面，到器件的实际表现。From materials and interfaces to device behavior.

ITO / IGZO

缺陷、氢与稳定性Defects, hydrogen
& stability

偏压和温度应力下，晶体管的阈值为什么会漂移？我研究氟钝化与栅侧界面工程如何影响这些退化过程。Why does transistor threshold voltage drift under bias and temperature stress? I study how fluorine passivation and gate-side interface engineering affect these degradation processes.

器件制备 / 偏压应力测试 / 材料表征Fabrication / Bias-stress measurements / Materials characterization
栅侧氢调控研究Read the gate-side hydrogen study ↗
BEOL / LOGIC

低温工艺下的器件调控Device control within
a low thermal budget

后道集成不能依赖高温处理。我研究用室温氟化调节器件阈值，并通过反相器验证它在逻辑电路中的应用。BEOL integration limits the thermal budget. I investigate room-temperature fluorination for threshold control, with inverter demonstrations connecting device engineering to logic circuits.

室温氟化 / 阈值调控 / 反相器验证Room-temperature fluorination / Threshold control / Inverters
室温阈值工程研究Read the threshold-engineering study ↗

合作研究还涉及氧化物器件的短沟道效应与存储应用：My collaborative work also examines short-channel effects and oxide memory: 区分偏压应力效应与真实 DIBLdistinguishing bias-stress artifacts from intrinsic DIBL。

实验室里的工作In the lab

我的研究从洁净室里的器件制备开始，接着是电学与材料表征，再回到数据和器件物理。My research starts with cleanroom fabrication, continues through electrical and materials characterization, and returns to data and device physics.

除了研究，我也是 NUS E6 洁净室的设备高级用户，参与操作规范编写与新用户培训，并担任 IEEE Electron Device Letters 审稿人。I am also a designated tool superuser in the NUS E6 cleanroom, contributing to operating procedures and new-user training, and a reviewer for IEEE Electron Device Letters.

EBL · ICP-RIE · ALD · Sputtering
XPS · SIMS · TCAD · Python · MATLAB

最佳学生论文奖Best Student Paper AwardIEEE ICICDT, 2022

2020 MCM · Meritorious Winner

教育经历Education

National University of Singapore电气与计算机工程 · 博士在读Ph.D. candidate, Electrical & Computer Engineering预计 2027 年 2 月毕业Expected graduation: February 2027

National University of Singapore电气工程 · 硕士M.Sc., Electrical Engineering

华南理工大学South China University of Technology信息工程 · 学士B.Eng., Information Engineering

联系我Get in touch

研究合作、器件与工艺研发，或职业机会。Research collaboration, device and process R&D, or career opportunities.

[email protected]